| PART |
Description |
Maker |
| BC33825 BC33740 BC337 BC33840 BC33716 BC33725 BC33 |
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
RES 220 OHMS 1% 1/4W 1206 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
SWITCHING AND AMPLIFIER APPLICATIONS 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SC5297 |
8 A, 800 V, NPN, Si, POWER TRANSISTOR
|
|
| KSC5802ASDTBTU |
10 A, 800 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD SEMICONDUCTOR CORP
|
| TT2140LS SANYOELECTRICCO.LTD.-TT2140LS |
6 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR)
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric
SANYO[Sanyo Semicon Device]
|
| 2SC3978A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 2 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7
800 A, 2000 V, SCR MODULE-7
800 A, 2200 V, SCR MODULE-7
150 A, 800 V, SCR
900 A, 800 V, SCR
900 A, 600 V, SCR
800 A, 800 V, SCR
120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| BU4508DF |
Silicon Diffused Power Transistor(硅扩散功率型晶体 8 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BU2525DX |
Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
|
